WNM3003 n-channel, 30v, 4.0 a, power mosfet descriptions the WNM3003 is n-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion and power switch applications. standard product WNM3003 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-23 applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging sot-23 configuration (top view) wt3* wt3 = device code * = month (a~z) marking order information device package shipping WNM3003-3/tr sot-23 3000/tape&reel d 3 2 s 1 g v (br)dss rds(on) ( ? ) 0.033@ 10v 0.033@ 10v 30v 0.043 @ 4.5v product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds 30 gate-source voltage v gs 20 v t a =25c 4.0 3.7 continuous drain current a t a =70c i d 3.2 3.0 a t a =25c 0.8 0.7 maximum power dissipation a t a =70c p d 0.5 0.4 w t a =25c 3.7 3.4 continuous drain current b t a =70c i d 2.9 2.7 a t a =25c 0.7 0.6 maximum power dissipation b t a =70c p d 0.4 0.3 w pulsed drain current c i dm 10 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t ? 10 s 120 145 junction-to-ambient thermal resistance a steady state r ja 132 168 t ? 10 s 145 174 junction-to-ambient thermal resistance b steady state r ja 158 202 junction-to-case thermal resistance steady state r jc 60 75 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. WNM3003 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = 250ua 30 v zero gate voltage drain current i dss v ds =24 v, v gs gate-to-source leakage current i gss v ds = 0 v, v gs = 20v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250ua 1.0 1.6 3.0 v v gs = 10v, i d = 3.1a v gs = 10v, i d = 2.5a drain-to-source on-resistance r ds(on) v gs = 4.5v, i d = 2.0a m ? forward transconductance g fs v ds = 4.5v, i d = 2.8a 5.8 s charges, capacitances and gate resistance input capacitance c iss 570 output capacitance c oss 72 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = 15 v 64 pf total gate charge q g(tot) 11.6 threshold gate charge q g(th) 0.8 gate-to-source charge q gs 1.25 gate-to-drain charge q gd v gs =10 v, v ds =15 v, i d = 3.1a 3.0 nc switching characteristics turn-on delay time td(on) 5 rise time tr 3.3 turn-off delay time td(off) 39 fall time tf v gs = 10 v, v ds = 15 v, i d =1a, r g =6 ? 4.4 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = 1.5a 0.50 0.84 1.50 v = 0v 1 ua 33 47 33 47 43 59 WNM3003 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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